| 摘要 |
PURPOSE:To evenly improve electric characteristics of TFTs by implanting silicon ion into a specified area of polysilicon film so that, with a part of the film left, the remaining polysilicon film is formed into an amorphous silicon. CONSTITUTION:After a polysilicon film layer is formed on an insulation film 1, a gate electrode 2, consisting of polysilicon, is formed by patterning. A gate insulation film 3 is formed so as to cover the gate electrode 2 by CVD method. Then, silicon is ion-implanted on its entire surface, so that any part of a polysilicon 5 other than those at the side wall of gate electrode 2 is made into amorphous, thus an amorphous silicon 5a is formed. Since, with this, solid phase recrystallization of the amorphous silicon 5 is evenly performed, the characteristics of individual film transistor is improved. |
