| 摘要 |
PURPOSE:To form a contact hole having little roughness by a method wherein the area of a contact hole is formed wider than a specified area of a region which connects a contact hole in such a way that its position is not superposed on that of the contact hole in the (n+1)th layer insulator layer, but on that of a contact hole in a (n+2)th layer insulator layer. CONSTITUTION:The area of a contact hole formed in an n-th layer insulator layer 3 on an n-th layer conductor layer 2 is formed in 10% or higher of that of a region, where connects with a contact hole in the layer 2, of the layer 3. A contact hole formed in a (n+1)th layer insulator layer 3 is formed in such a way that its position is not superposed on that of the contact hole formed in the layer 3. On the other hand, a contact hole formed in a (n+2)th layer insulator layer 3 is formed in such a way that one part of its position is superposed on that of the contact hole formed in the layer 3. As a result, a contact hole having little roughness can be formed in a limited area. |
