| 摘要 |
PURPOSE:To increase the efficiency of measurement of the accuracy of stepping of a wafer stage and also to analyze factors affecting the accuracy of stepping. CONSTITUTION:Marks (72XP1, 72YP1, etc.) for LIA measurement are formed by exposure as pattern images of a reticle sequentially in shot areas ES1 to ES16 on a wafer W. As a first measurement, the position of the mark for LIA measurement in each shot area is detected in the sequence of the shot areas ES13 to ES4, for instance, and the coordinates of a wafer stage whereon the wafer W is set is monitored by a laser interferometer. As a second measurement, thereafter, the position of the mark for LIA measurement in each shot area is detected in the sequence different from that in the first, for instance, and the coordinates of the wafer stage are monitored by the laser interferometer. An error in stepping is determined on the basis of a difference between the results of the measurements of two times. |
