发明名称 SEMICONDUCTOR DEVICE AND POWER SYSTEM TO REMARKABLY IMPROVE POWER GENERATION EFFICIENCY
摘要 PURPOSE: A semiconductor device is provided to remarkably improve power generation efficiency by greatly improving voltage conversion efficiency in a DC/DC converter and by coping with large current and high frequency without decreasing the voltage conversion efficiency. CONSTITUTION: The first power transistor is used as a high side switch. The source terminal of the first power transistor is connected to the first outer connection terminal(LS1) and the second outer connection terminal(LS2), respectively. The first and second outer connection terminals are divided into different paths, respectively. An electrode part installed in a semiconductor chip(3) having the first power transistor is connected to an outer connection terminal by interposing a plate-type metal plate.
申请公布号 KR20040098562(A) 申请公布日期 2004.11.20
申请号 KR20040033688 申请日期 2004.05.13
申请人 RENESAS TECHNOLOGY CORP. 发明人 SHIRAISHI MASAKI;IWASAKI TAKAYUKI;MATSUURA NOBUYOSHI;UNO TOMOAKI
分类号 H01L21/60;H01L23/48;H02M7/00 主分类号 H01L21/60
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