发明名称 Bonded wafer especially silicon wafer
摘要 A bonded wafer consists of two or more wafer layers bonded together by a binder comprising an amorphous hot melt adhesive aromatic polyimide (X) layer or a sandwich of a polyimide (Y) substrate layer between two amorphous hot melt adhesive aromatic polyimide (X) layers. Also claimed are processes for producing a bonded wafer. Further claimed is a substrate obtained by subjecting a surface of the above bonded wafer to grinding, polishing and/or etching.
申请公布号 DE19813669(A1) 申请公布日期 1998.10.01
申请号 DE19981013669 申请日期 1998.03.27
申请人 UBE INDUSTRIES, LTD., UBE, YAMAGUCHI, JP 发明人 HOSOMA, TOSHINORI, UBE, YAMAGUCHI, JP;YOSIOKA, KAZUHIKO, UBE, YAMAGUCHI, JP;KATSUKI, SHOUZOU, UBE, YAMAGUCHI, JP
分类号 B32B7/12;B32B15/08;B32B27/34;B81C1/00;H01L21/02;H01L21/20;H01L21/762;(IPC1-7):H01L21/02;B32B27/00 主分类号 B32B7/12
代理机构 代理人
主权项
地址