| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin dielectric film having both of higher relative dielectric constant and higher insulation and a manufacturing method thereof. SOLUTION: In a thin dielectric film 2 having a thickness of 0.3-2 μm consisting of perovskite-type crystal grains 3 containing Pb, Mg, Nb and Ti as metal elements, the perovskite-type crystal grain 3 has a grain diameter D and the film consists of flat grains 3 whose average diameter d is larger than the film thickness t. Here, the thin dielectric film 2 has a relative dielectric constant not less than 250 and a breakdown voltage not less than 60 V/μm at frequency 1 kHz (at room temperature) for measurement. |
