发明名称 |
FIELD EFFECT SEMICONDUCTOR DEVICE HAVING DIPOLE BARRIER |
摘要 |
A field effect semiconductor device including a substrate, a dipole barrier formed on the substrate, a channel layer formed on the dipole barrier, and source, gate and drain electrodes formed on the channel layer. The dipole barrier provides a potential barrier and a maximum electric field sufficient to confine electrons to the channel layer.
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申请公布号 |
CA2323747(A1) |
申请公布日期 |
1999.09.10 |
申请号 |
CA19992323747 |
申请日期 |
1999.03.04 |
申请人 |
WELCH ALLYN, INC. |
发明人 |
SHEALY, JAMES RICHARD;EASTMAN, LESTER FUESS |
分类号 |
H01L29/10;H01L29/812;(IPC1-7):H01L29/772 |
主分类号 |
H01L29/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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