| 摘要 |
PROBLEM TO BE SOLVED: To provide a sensor having high heat stability by containing an antiferromagnetic(AFM) layer made of a material exhibiting a specific blocking temperature and a multiple film to be pinned, which is arranged on the AFM layer, in a magnetic resistance device. SOLUTION: The reading sensor 76 is arranged on a 1st dielectric layer 74. The reading sensor 76 contains a free layer 78, a spacer layer 80, the multiple layer 82 to be pinned and the antiferromagnetic layer 84. The multiple layer 82 to be pinned is laminated on the spacer layer 80 and contains a 1st ferro magnetic(FM) layer 86 and a 2nd FM layer 88, which are separated from each other by an intermediate layer 90. The AFM layer 84 is formed from an optional proper AFM material exhibiting a blocking temperature higher than 200 deg.C. Then, the reading sensor 76 is high in heat stability, gives higher reliability in regard to magnetism and as a result, is reduced in the possibility of data loss.
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