| 摘要 |
PROBLEM TO BE SOLVED: To reduce gate parasitic resistance RG, to speed up switching speed, and to realize high integration. SOLUTION: An electric field relaxing region 102 having the same potential as a drain is formed on a semiconductor substrate 101 which is a rain electrode. Base region 106, whose conductivity type is opposite to the field release region 102 and source regions 107, whose conductivity type is the same as the field relaxing region 102, are arranged. A groove 103 reaching the field relaxing region 102 through the source regions 107 and the base regions 106 from the surface of the substrate is formed. The inner side of the groove 103 is filled with a gate electrode 105 made of polysilicon with an interposed gate insulating film 104. The upper part of a gate electrode is an alloy layer (silicide layer) 109 of a metal such as titanium and silicon. The surfaces of the base regions 106 and the source regions 107 are silicide layers 110.
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