发明名称 |
Method of manufacturing semiconductor devices |
摘要 |
A method of manufacturing a semiconductor device comprising a wiring formation step including: forming an interlayer insulating film composed of a boron nitride film having a dielectric constant of less than 4 on an (n)-th layer wiring, forming a hole and/or a trench in the interlayer insulating film, burying the hole and/or trench with a conductive material and forming an (n+1)-th layer wiring on the hole and/or trench.
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申请公布号 |
US2002001939(A1) |
申请公布日期 |
2002.01.03 |
申请号 |
US20010886467 |
申请日期 |
2001.06.22 |
申请人 |
KINOSHITA TAKAO;ORITA KUNIHIKO |
发明人 |
KINOSHITA TAKAO;ORITA KUNIHIKO |
分类号 |
H01L21/318;H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/318 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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