发明名称 |
Method of manufacturing DNA chip |
摘要 |
<p>A method of manufacturing a DNA (deoxyribonucleic acid) chip is provided. The DNA chip has a plurality of transistors formed on a substrate and an organic layer and a DNA probe sequentially stacked on a gate of the transistor. The method includes forming an inter-layer insulation layer on the substrate to cover the transistors, planarizing the inter-layer insulation layer, forming at least two contact holes exposing gate electrodes of the transistors in the inter-layer insulation layer, selectively forming organic layers on the exposed gate electrodes, attaching a first DFR (dry film resist) layer to the upper surface of the inter-layer insulation layer to cover the contact holes, removing a portion of the first DFR layer covering a first contact hole among the contact holes, attaching a first DNA probe to the organic layers in the first contact hole, and removing a remaining portion of the first DFR layer.</p> |
申请公布号 |
EP1739417(A1) |
申请公布日期 |
2007.01.03 |
申请号 |
EP20060013652 |
申请日期 |
2006.06.30 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SHIM, JEO-YOUNG;LEE, SOO-SUK;PARK, CHIN-SUNG;HWANG, KYU-YOUN |
分类号 |
G01N27/414;C12Q1/68;G01N33/543 |
主分类号 |
G01N27/414 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|