发明名称 Method of manufacturing DNA chip
摘要 <p>A method of manufacturing a DNA (deoxyribonucleic acid) chip is provided. The DNA chip has a plurality of transistors formed on a substrate and an organic layer and a DNA probe sequentially stacked on a gate of the transistor. The method includes forming an inter-layer insulation layer on the substrate to cover the transistors, planarizing the inter-layer insulation layer, forming at least two contact holes exposing gate electrodes of the transistors in the inter-layer insulation layer, selectively forming organic layers on the exposed gate electrodes, attaching a first DFR (dry film resist) layer to the upper surface of the inter-layer insulation layer to cover the contact holes, removing a portion of the first DFR layer covering a first contact hole among the contact holes, attaching a first DNA probe to the organic layers in the first contact hole, and removing a remaining portion of the first DFR layer.</p>
申请公布号 EP1739417(A1) 申请公布日期 2007.01.03
申请号 EP20060013652 申请日期 2006.06.30
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SHIM, JEO-YOUNG;LEE, SOO-SUK;PARK, CHIN-SUNG;HWANG, KYU-YOUN
分类号 G01N27/414;C12Q1/68;G01N33/543 主分类号 G01N27/414
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