| 摘要 |
An opaque silicon lens for a high power and low brightness light emitting diode and a manufacturing method thereof are provided to increase the lifetime and to prevent the corrosion or degradation of a light emitting diode chip or a wire. A platinum catalyst is added to a silicon resin(100). An UV ray is irradiated onto the resultant material at the temperature of 60 to 100 °C. The wavelength of the UV ray is in a range of 253 to 300 nm. At this time, the resultant material is rotated in the range of 700 to 850 rpm. A Diamminedinitro-Platinum Pt(NH3)2(NO2)2 is used as the platinum catalyst. The resultant material is used as a lens material.
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