| 摘要 |
PROBLEM TO BE SOLVED: To form an interface between a semiconductor layer composed of polycrystalline silicon and a gate insulating film in a good state when a thin film transistor is manufactured on a glass substrate, and to intend to enhance a current drive capability and to decrease variations of a threshold voltage. SOLUTION: In a manufacturing method of the thin film transistor, after a surface of a semiconductor layer 2 composed of polycrystalline silicon formed on a glass substrate 1 is oxidized to form a first insulating film 3, a second insulating film 4 is deposited on the first insulating film 3. The step of forming the first insulating film 3 has the high density plasma processing step of generating a high density plasma by use of a gas containing oxygen and hydrogen as a component, and of processing the surface of the semiconductor layer 2 by an active seed in the high density plasma. The gas containing oxygen and hydrogen as a component is, for example, a gas containing vapor, or a mixed gas of an oxygen gas and hydrogen gas. The etching step of etching an oxide film formed in the high density plasma processing step is contained, and the high density plasma processing step is performed a plurality of times across the etching step, preferably. COPYRIGHT: (C)2008,JPO&INPIT
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