| 摘要 |
PROBLEM TO BE SOLVED: To provide an evaluation method of substrates capable of detecting dislocation on the surface and the inside of the substrate. SOLUTION: The evaluation method of a substrate 10 includes the steps of: applying alkali etching to the surface of a growth layer (epitaxial layer) 12 formed on the single crystal substrate 10 to form first etch pits 14 to the surface of the growth layer, removing part or all of the growth layer by anisotropic dry etching to transfer the first etch pits 14 to an exposed observing face, and applying the alkali etching to the observing face to form second etch pits 16. The method detects dislocation existing in the surface and the inside of the substrate 10 on the basis of the first etch pits 14 and the second etch pits 16 formed to the observing face. COPYRIGHT: (C)2008,JPO&INPIT
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