| 摘要 |
PROBLEM TO BE SOLVED: To provide a process for forming an insulating film by atomic layer deposition in which residual carbon can be removed sufficiently and an oxygen rich film is not formed excessively. SOLUTION: In the process for fabricating a semiconductor device where an insulating film composed of a metal oxide is formed on a substrate by atomic layer deposition by repeating a first step for adsorbing organic metal gas component to the surface of the substrate being processed, and a second step for bonding oxygen to the organic metal gas component adsorbed to the surface of the substrate being processed, every time when a film deposition step by (a) ALD sequence performing the first and second steps is repeated a predetermined number of times, (b) SHO sequence for removing residual carbon in the insulating film is performed by short time annealing while supplying oxygen containing gas to the surface of the substrate being processed under a state where the substrate temperature is raised temporarily as compared with the (a) ALD sequence by using a lamp as a heat source. COPYRIGHT: (C)2008,JPO&INPIT
|
