| 摘要 |
A solid state image pickup device includes: a first area defined on a principal surface of a semiconductor substrate; a second area defined in an area adjacent to the first area along a first direction; and a third area defined in an area adjacent to the second area along the first direction, wherein the first area includes: a plurality of photoelectric conversion elements; and a plurality of vertical transfer channels formed adjacent to the plurality of photoelectric conversion elements; the second area includes: a horizontal transfer channel; and a floating diffusion region and a first stage drive FET of an amplifier; and the third area includes: a first state load FET, a second stage drive FET, a second stage load FET, a third stage drive FET and a third stage load FET, respectively of the amplifier. The solid state image pickup device can be made compact.
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