GAN SEMICONDUCTOR ELEMENT

摘要

Provided is a GaN semiconductor element wherein current characteristics at each gate electrode are prevented from largely fluctuating, in the case where there are a plurality of wall surfaces whereupon the gate electrodes are formed. On a sapphire substrate (1), a GaN buffer layer (2), an undoped GaN layer (3), an n-type GaN drain layer (4) and a p-type GaN channel layer (5) are stacked. On the p-type GaN channel layer (5), an n-type GaN source layer (6) is formed. On a side surface of a ridge section (11), an insulating film (7) and a gate electrode (8) are formed. Though the number of wall surfaces of the ridge section (11) changes due to the shape of the ridge section (11), at least two wall surfaces are formed in the same plane direction irrespective of the number of the wall surfaces of the ridge section (11).