发明名称 Input/output line sense amplifier and semiconductor memory device using the same
摘要 An input/output (I/o) line sense amplifier includes a buffer unit, a sense amplifier, and a precharge unit. The buffer unit is driven by a first level voltage to buffer a strobe signal, and the sense amplifier is driven by a second level voltage to amplify a signal of an I/O line in response to an output signal of the buffer unit. The precharge unit is driven by the first level voltage to precharge an output signal of the sense amplifier in response to the output signal of the buffer unit.
申请公布号 US2008316840(A1) 申请公布日期 2008.12.25
申请号 US20070004228 申请日期 2007.12.20
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM CHANG-IL
分类号 G11C7/10;G11C7/06 主分类号 G11C7/10
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