| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a spin FET capable of actualizing a function identical with that of half metal at a room temperature. Ž<P>SOLUTION: A semiconductor substrate 1 comprises (100) Si, tunnel barrier wall layers 4 and 6 comprise (100) MgO, and a source electrode 5 and drain electrode 7 comprise (100) Co<SB>X</SB>Fe<SB>1-X</SB>(0≤X≤1), respectively. The magnetizing direction MS of the source electrode 5 is fixed, and the magnetizing direction MD of the drain electrode 7 can be changed externally. The element can actualize spin FET at a room temperature although no half metal is used. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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