| 摘要 |
PROBLEM TO BE SOLVED: To provide a group III nitride semiconductor light emitting element manufacturing method of growing a flat luminescent layer without influencing an in concentration of the luminescent layer.SOLUTION: A group III nitride semiconductor light emitting element manufacturing method comprises an n-side superlattice layer formation process of forming an n-side superlattice layer 150. In the n-side superlattice layer formation process, an InGaN layer 151, a GaN layer 152 on the InGaN layer 151 and an n-type GaN layer 153 on the GaN layer 152 are repeatedly formed. When the InGaN layer 151 is formed, a nitride gas is supplied as a carrier gas. When the n-type GaN layer 153 is formed, a first mixed gas obtained by mixture of a nitrogen gas and a hydrogen gas is supplied as a carrier gas. A mixture ratio of the hydrogen gas in the first mixed gas is expressed in volume ratio within a range of larger than 0% and not more than 75%.SELECTED DRAWING: Figure 4 |
