Engineered substrates for semiconductor epitaxy and methods of fabricating the same

摘要

In a method for fabricating an engineered substrate for semiconductor epitaxy, an array of seed structures is assembled on a surface of the substrate. The seed structures in the array have substantially similar directional orientations of their crystal lattices, and are spatially separated from each other. Semiconductor materials are selectively epitaxially grown on the seed structures, such that a rate of growth of the semiconductor materials on the seed structures is substantially higher than a rate of growth of the semiconductor materials on regions of the surface. The semiconductor materials assume a lattice constant and directional orientation of crystal lattice that are substantially similar or identical to those of the seed structures. Related devices and methods are also discussed.

主权项

1. A method of fabricating a semiconductor device, the method comprising:
assembling an array of discrete seed structures on a surface of a target substrate such that respective crystal lattices of the discrete seed structures of the array have substantially identical orientations by transferring the discrete seed structures from a source substrate to the surface of the target substrate; and selectively growing respective semiconductor layers on the discrete seed structures that collectively define a continuous layer having a surface area of at least 100 square centimeters (cm2) on the surface of the target substrate, wherein the discrete seed structures of the array comprise ones of a plurality of discrete seed structures formed on the source substrate from a seed layer grown thereon.