发明名称 Method of controlling the switched mode ion energy distribution system
摘要 Systems, methods and apparatus for regulating ion energies in a plasma chamber and chucking a substrate to a substrate support are disclosed. An exemplary method includes placing a substrate in a plasma chamber, forming a plasma in the plasma chamber, controllably switching power to the substrate so as to apply a periodic voltage function (or a modified periodic voltage function) to the substrate, and modulating, over multiple cycles of the periodic voltage function, the periodic voltage function responsive to a defined distribution of energies of ions at the surface of the substrate so as to effectuate the defined distribution of ion energies on a time-averaged basis.
申请公布号 US9362089(B2) 申请公布日期 2016.06.07
申请号 US201213597050 申请日期 2012.08.28
申请人 Advanced Energy Industries, Inc. 发明人 Brouk Victor;Hoffman Daniel J.;Carter Daniel
分类号 C23C14/34;H01J37/32 主分类号 C23C14/34
代理机构 Neugeboren O'Dowd PC 代理人 Neugeboren O'Dowd PC
主权项 1. A method for providing a modified periodic voltage function to an electrical node, the electrical node configured for electrically-coupling to a substrate support of a plasma processing chamber, the method comprising: obtaining an effective capacitance value, C1, of the substrate support; storing the effective capacitance value, C1, in a memory; providing an ion current compensation, IC, to the electrical node; providing a periodic voltage function to the electrical node, the periodic voltage function being modified by the ion current compensation, IC, to form the modified periodic voltage function; providing the modified periodic voltage function to the electrical node, the modified periodic voltage function having pulses and a portion between the pulses; accessing the memory to retrieve the effective capacitance value, C1; determining a slope, dV0/dt, of the portion between the pulses of the modified periodic voltage function; and controlling a DC current source to adjust a magnitude of the ion current compensation, IC, applied to the substrate support untilⅆV0ⅆt=ICC1.
地址 Fort Collins CO US