发明名称 |
High endurance non-volatile storage |
摘要 |
A non-volatile storage system is disclosed that includes non-volatile memory cells designed for high endurance and lower retention than other non-volatile memory cells. |
申请公布号 |
US9361986(B2) |
申请公布日期 |
2016.06.07 |
申请号 |
US201213622045 |
申请日期 |
2012.09.18 |
申请人 |
SanDisk Technologies Inc. |
发明人 |
Chen Jian;Gorobets Sergei;Sprouse Steven;Kuo Tien-Chien;Li Yan;Lee Seungpil;Mak Alex;Dutta Deepanshu;Higashitani Masaaki |
分类号 |
G11C16/10;G11C5/06;G11C11/56 |
主分类号 |
G11C16/10 |
代理机构 |
Vierra Magen Marcus LLP |
代理人 |
Vierra Magen Marcus LLP |
主权项 |
1. A method for operating a non-volatile storage system, comprising:
applying one or more programming pulses to a first non-volatile storage element of a first set of plural non-volatile storage elements each having a floating gate structured to have a limited charge absorbing capability irrespective of increase of voltage of programming pulses such that it can be saturated by electrons transferred to it from a channel of the storage element without becoming over programmed, wherein the applied one or more programming pulses cause the floating gate of the first non-volatile storage element to be saturated by electrons transferred to it from the channel of the first non-volatile storage element to thereby program the first non-volatile storage element without over programming the first non-volatile storage element; wherein the system includes a second set of plural non-volatile storage elements each having a corresponding second floating gate that is thicker than the first said floating gate of each of the storage elements of the first set. |
地址 |
Plano TX US |