发明名称 High endurance non-volatile storage
摘要 A non-volatile storage system is disclosed that includes non-volatile memory cells designed for high endurance and lower retention than other non-volatile memory cells.
申请公布号 US9361986(B2) 申请公布日期 2016.06.07
申请号 US201213622045 申请日期 2012.09.18
申请人 SanDisk Technologies Inc. 发明人 Chen Jian;Gorobets Sergei;Sprouse Steven;Kuo Tien-Chien;Li Yan;Lee Seungpil;Mak Alex;Dutta Deepanshu;Higashitani Masaaki
分类号 G11C16/10;G11C5/06;G11C11/56 主分类号 G11C16/10
代理机构 Vierra Magen Marcus LLP 代理人 Vierra Magen Marcus LLP
主权项 1. A method for operating a non-volatile storage system, comprising: applying one or more programming pulses to a first non-volatile storage element of a first set of plural non-volatile storage elements each having a floating gate structured to have a limited charge absorbing capability irrespective of increase of voltage of programming pulses such that it can be saturated by electrons transferred to it from a channel of the storage element without becoming over programmed, wherein the applied one or more programming pulses cause the floating gate of the first non-volatile storage element to be saturated by electrons transferred to it from the channel of the first non-volatile storage element to thereby program the first non-volatile storage element without over programming the first non-volatile storage element; wherein the system includes a second set of plural non-volatile storage elements each having a corresponding second floating gate that is thicker than the first said floating gate of each of the storage elements of the first set.
地址 Plano TX US