Thyristors

摘要

Some embodiments include thyristors having first and second electrode regions, first and second base regions, and material having a bandgap of at least 1.2 eV in at least one of the regions. The first base region is between the first electrode region and the second base region, and the second base region is between the second electrode region and the first base region. The first base region interfaces with the first electrode region at a first junction, and interfaces with the second base region at a second junction. The second base region interfaces with the second electrode region at a third junction. A gate is along the first base region, and in some embodiments does not overlap either of the first and second junctions. Some embodiments include methods of programming thyristors, and some embodiments include methods of forming thyristors.

主权项

1. A method of forming a plurality of thyristors, comprising:
forming at least one wide-bandgap material over a monocrystalline silicon substrate, wherein a wide bandgap is a bandgap greater than or equal to 1.2 eV; patterning the wide-bandgap material into a plurality of substantially vertical thyristor pillars extending upwardly from the substrate; forming one or more dielectric materials along sidewalls of the thyristor pillars; forming gates along the thyristor pillars; the gates being spaced from the thyristor pillars by the one or more dielectric materials; the gates being in a two-to-one correspondence with the pillars so that each pillar is associated with a pair of vertically spaced gates; and forming a patterned material across the substrate, openings extending through the patterned material and to regions of the substrate, the openings being arranged in a first pattern, the method further comprising: epitaxially growing the wide-bandgap material to fill the openings with the wide-bandgap material and to form an expanse of the wide-bandgap material over the patterned material; forming a patterned mask over the expanse of the wide-bandgap material; and transferring a pattern from the mask to the expanse of the wide-bandgap material to pattern the wide-bandgap material into the thyristor pillars, wherein the patterned material comprises electrically conductive material.