| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of recovering damage of an interlayer insulating film and reducing a fixed charge (a trap level) in the film.SOLUTION: A method of manufacturing a semiconductor device includes: a first step of forming an interlayer insulating film containing at least silicon and oxygen, on a wafer including a semiconductor; a second step of forming a contact hole extending in a direction from a surface of the interlayer insulating film toward the wafer; a third step of forming a contact plug in the contact hole; a fourth step of forming wiring connected to the contact plug, on the interlayer insulating film; and a fifth step of irradiating the interlayer insulating film with a microwave to couple between a dangling bond of the silicon formed in the interlayer insulating film at the second step to the fourth step, and a dangling bond of the oxygen. |
