THIN FILM TRANSISTOR, DISPLAY APPARATUS INCLUDING THE THIN FILM TRANSISTOR, AND METHOD OF MANUFACTURING THE THIN FILM TRANSISTOR

摘要

A thin film transistor includes: a substrate, a semiconductor layer disposed on the substrate, a first gate electrode and a second gate electrode disposed on the semiconductor layer, a gate insulating layer disposed between the semiconductor layer and the first and second gate electrodes and having a first through hole between the first and second gate electrodes and a capping layer covering the first gate electrode and contacting the semiconductor layer via the first through hole. The capping layer includes a conductive material.

主权项

1. A method of manufacturing a thin film transistor, comprising:
forming a semiconductor layer on a substrate; forming a gate insulating layer covering the semiconductor layer; forming a first gate electrode and a second gate electrode on the gate insulating layer; forming a first through hole in a region of the gate insulating layer between the first gate electrode and the second gate electrode exposing the semiconductor layer; and forming a capping layer including a conductive material covering the second gate electrode and contacting the semiconductor layer via the first through hole.