SEMICONDUCTOR DEVICE HAVING A SILICON AND GERMANIUM MATERIAL FILLING A CAVITY REGION COMPRISING A NOTCH REGION FORMED WITHIN A SEMICONDUCTOR SUBSTRATE

摘要

The present invention is directed to semiconductor processes and devices. More specifically, embodiments of the present invention provide a semiconductor device that comprises a shaped cavity formed from two trench structures, and the shaped cavity is filled with silicon and germanium material. There are other embodiments as well.

主权项

1. A semiconductor device comprising:
a substrate comprising silicon material; a cavity region positioned within the substrate, the cavity region comprising two convex sidewalls and a bottom surface interfacing the substrate, the bottom surface comprising a notched region; and a filling material comprising silicon and germanium material positioned at least partially within the cavity region.