发明名称 Pattern forming method, device, and device manufacturing method
摘要 A pattern forming method which includes ejecting, through a nozzle, a liquid material containing a solvent and metal particles, and depositing droplets of the liquid material onto a pattern formation object, to thereby form a pattern thereon, wherein the viscosity of the liquid material before ejection thereof through the nozzle is lower than that of the liquid material at the time of deposition of droplets thereof onto the pattern formation object.
申请公布号 US9455074(B2) 申请公布日期 2016.09.27
申请号 US201314373679 申请日期 2013.03.28
申请人 NGK SPARK PLUG CO., LTD. 发明人 Saito Yuri;Uematsu Daisuke;Hayakawa Nobuhiro;Nakayama Ryouma;Mori Kentarou
分类号 B32B3/02;H01B13/00;H05K1/09;H05K3/12;H01B1/02;H01B13/30;H01B1/22;B29C67/00 主分类号 B32B3/02
代理机构 Sughrue Mion, PLLC 代理人 Sughrue Mion, PLLC
主权项 1. A pattern forming method comprising ejecting, through a nozzle, a liquid material containing a solvent and metal particles, and depositing droplets of the liquid material onto a pattern formation object, to thereby form a pattern thereon, the pattern forming method comprising: a first step of maintaining the liquid material at a first temperature before ejection thereof through the nozzle; a second step of maintaining the pattern formation object at a second temperature lower than the first temperature; a third step of depositing droplets of the liquid material ejected through the nozzle onto the pattern formation object; and a fourth step of promoting evaporation of the solvent contained in the liquid material deposited onto the pattern formation object, wherein: the viscosity of the liquid material before ejection thereof through the nozzle before the third step is lower than that of the liquid material at the time of deposition of droplets thereof onto the pattern formation object after the third step; wherein promotion of evaporation of the solvent in the fourth step is carried out by heating the liquid material; and wherein, after the third step, the viscosity of the liquid material at the time of deposition of droplets thereof onto the pattern formation object is 25 mPa·s or more.
地址 Aichi JP