Semiconductor memory device and method for manufacturing the same

摘要

A semiconductor memory device includes a connecting member including a semiconductor material, a first electrode film, a first insulating film, a stacked body and three or more semiconductor pillars. The stacked body includes second electrode films and second insulating films that alternately stacked. The semiconductor pillars are arrayed along two or more directions, extend in a stacking direction, pierce through the stacked body and the first insulating film, and are connected to the connecting member. The device includes a third insulating film provided between the semiconductor pillars and the stacked body and between the connecting member and the first electrode film. A charge storage layer is provided at least between one of the second electrode films and the third insulating film.

主权项

1. A semiconductor memory device comprising:
a connecting member including a semiconductor material; a first electrode film provided at least above the connecting member; a first insulating film provided on the first electrode film; a stacked body provided on the first insulating film, the stacked body including second electrode films and second insulating films, each of the second electrode films and each of the second insulating films being alternately stacked; three or more semiconductor pillars arrayed along two or more directions different from one another, extending in a stacking direction of the second electrode films and the second insulating films, piercing through the stacked body and the first insulating film, and connected to the connecting member; a third insulating film provided between the semiconductor pillars and the stacked body and between the connecting member and the first electrode film; and a charge storage layer provided at least between one of the second electrode films and the third insulating film, the semiconductor pillars and the connecting member being integrally formed.