| 摘要 |
A light sensing device comprises a photoconductive layer overlaying an array of PN junction diodes integrated within a semiconductor substrate. When a voltage is applied to the device to reverse bias the diodes, the voltage divides across the device in accordance with the capacitance of capacitive elements formed by the photoconductive layer and the junction capacitance of the diodes. When light impinges on the device, charge transfers from the photoconductive layer and accumulates at the underlying junctions at a rate that is directly dependent on the intensity of light incident on the corresponding portion of the photoconductive layer. When a diode reverse breakdown voltage is reached, the corresponding diode conducts. This causes an increase in current through the device, thereby signaling that a desired localized exposure has been attained.
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