发明名称 |
Menetelmä kapasitiivisen anturin lämpötilariippuvuuden pienentämiseksi sekä kapasitiivinen anturirakenne |
摘要 |
A method of manufacturing a sensor including forming an insulating layer on top of a conductive substrate, and forming a conducting electrode on top of the insulating layer. Further, the insulating layer is formed to include support areas formed at edges of the conducting electrode and a partial area formed under the conducting electrode, and a thickness (d 2 ) of the partial area of the insulating layer is less than a thickness (d 1 ) of the support areas of the insulating area. |
申请公布号 |
FI114825(B) |
申请公布日期 |
2004.12.31 |
申请号 |
FI20020000292 |
申请日期 |
2002.02.13 |
申请人 |
VTI TECHNOLOGIES OY, |
发明人 |
KUISMA,HEIKKI;LAHDENPERAE,JUHA;MUTIKAINEN,RISTO |
分类号 |
G01L9/00;G01L19/04;G01P15/08;G01P15/125 |
主分类号 |
G01L9/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|