发明名称 Menetelmä kapasitiivisen anturin lämpötilariippuvuuden pienentämiseksi sekä kapasitiivinen anturirakenne
摘要 A method of manufacturing a sensor including forming an insulating layer on top of a conductive substrate, and forming a conducting electrode on top of the insulating layer. Further, the insulating layer is formed to include support areas formed at edges of the conducting electrode and a partial area formed under the conducting electrode, and a thickness (d 2 ) of the partial area of the insulating layer is less than a thickness (d 1 ) of the support areas of the insulating area.
申请公布号 FI114825(B) 申请公布日期 2004.12.31
申请号 FI20020000292 申请日期 2002.02.13
申请人 VTI TECHNOLOGIES OY, 发明人 KUISMA,HEIKKI;LAHDENPERAE,JUHA;MUTIKAINEN,RISTO
分类号 G01L9/00;G01L19/04;G01P15/08;G01P15/125 主分类号 G01L9/00
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