| 摘要 |
<p>Wafers are etched in a dry-etching device in which the distance between the wafer and the surface opposed to the wafer is not larger than one half of the diameter of the wafer. Even when a wafer having a particularly large diameter is used, products of the etching reaction can be made to impinge uniformly on both the periphery and center of the wafer, making it possible to effect uniform etching over the surface of the wafer.</p> |
