| 发明名称 |
Process for producing an integrated semiconductor memory configuration |
| 摘要 |
Process for producing an integrated semiconductor memory configuration, in particular one suited to the use of ferroelectric materials as storage dielectrics, in which a conductive connection between one electrode of a storage capacitor and a selection transistor is not produced until after the storage dielectric has been deposited; and a semiconductor memory configuration produced using the production process.
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| 申请公布号 |
US2001039106(A1) |
申请公布日期 |
2001.11.08 |
| 申请号 |
US20010883011 |
申请日期 |
2001.06.15 |
| 申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
HINTERMAIER FRANK;MAZURE-ESPEJO CARLOS |
| 分类号 |
H01L21/02;H01L21/768;H01L21/8242;H01L21/8247;H01L27/10;H01L27/108;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/02 |
| 代理机构 |
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