| 发明名称 |
Method for manufacturing capacitor in semiconductor device and the capacitor |
| 摘要 |
In the method for manufacturing a capacitor in a semiconductor device, a nitride film is formed over a lower electrode on a semiconductor substrate, and a TaON film is formed over the nitride film. The Al2O3 film is formed over the TaON film, and an upper electrode is formed over the Al2O3 film.
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| 申请公布号 |
US2002001164(A1) |
申请公布日期 |
2002.01.03 |
| 申请号 |
US20010879998 |
申请日期 |
2001.06.14 |
| 申请人 |
|
发明人 |
AHN BYOUNG KWON;PARK DONG SOO |
| 分类号 |
C23C16/30;H01L21/02;H01L21/314;H01L21/316;H01L21/318;H01L21/8242;H01L27/108;(IPC1-7):H01G4/228 |
主分类号 |
C23C16/30 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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