发明名称 GASEOUS PHASE GROWING DEVICE
摘要 A gaseous phase growing device, comprising a reaction container for disposing a substrate therein, a first gas inlet part having a first gas inlet pipe with a gas jetting port opening in the reaction container formed therein and feeding the first gas formed with organic metal-containing gas into the reaction container, and a second gas inlet part having a second gas inlet pipe with a gas jetting port opening in the reaction container formed therein and feeding the second gas reacting to the organic metal-containing gas and having a density less than that of the organic metal-containing into the reaction container, wherein the gas jetting port of the first gas inlet pipe and the gas jetting port of the second gas inlet pipe are disposed along the outer periphery of a substrate disposed in the reaction container.
申请公布号 WO02091448(A1) 申请公布日期 2002.11.14
申请号 WO2002JP02378 申请日期 2002.03.13
申请人 TOKYO ELECTRON LIMITED;HASEBE, KAZUHIDE;YAMAMOTO, HIROYUKI;UMEHARA, TAKAHITO;KAWAKAMI, MASATO 发明人 HASEBE, KAZUHIDE;YAMAMOTO, HIROYUKI;UMEHARA, TAKAHITO;KAWAKAMI, MASATO
分类号 C23C16/44;C23C16/455;C23C16/458;C30B35/00;H01L21/205;H01L21/31;(IPC1-7):H01L21/31 主分类号 C23C16/44
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