BARRIER STRUCTURES FOR INTEGRATION OF HIGH K OXIDES WITH CU AND AI ELECTRODES

摘要

An integrated circuit barrier structure (10) such as ferroelectric stack, trench capacitor, non-volatile ferroelectric memory cell, and dynamic random access memory cells disposed between high dielectric constant metal oxide (10) and Cu or Al electrodes (18, 20), for preventing diffusion of species such as oxygen, bismuth, or lead from the high dielectric constant metal oxide into the Cu or Al electrodes (18, 20) against oxidization during deposition of the high dielectric constant metal oxide. The barrier structure (14, 16) can be formed as a single lazer of Pt, Ir, IrO2, Ir2O3, Ru, RuO2, CuO, Cu2O, A12O3 or a binery or ternary metal nitride, e.g., TaN, NbN, HfN, materials, e.g., Pt/TiA1N, Pt/Ir.