| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device which realizes accurate data reading regardless of distribution of data potential when a plurality of reference potentials are used. <P>SOLUTION: A semiconductor storage device includes a first reference circuit for generating a first reference potential, a second reference circuit for generating a second reference potential, a memory cell, a first sense amplifier for comparing the data potential read from the memory cell with the first reference potential and sensing, and a second sense amplifier for comparing the data potential with the second reference potential and sensing. The first sense amplifier and the second sense amplifier collaborate to judge whether the data potential is 0 or 1. The first reference potential is set up so that it is positioned at the maximum value side in the data potential distribution of 0 read from the memory cell, and the second reference potential is set up so that it is positioned at the minimum value side in the data potential distribution of 1 read from the memory cell. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
