| 摘要 |
Provided are a polishing agent to prevent the undesirable precipitation of iron hydroxide, and a method for polishing a semiconductor wafer having a front surface, a back surface and an edge by using the polishing agent. A polishing agent comprises water; an abrasive and/or colloid; methylglycinediacetic acid or a disuccinate represented by a formula; and an alkali metal salt or alkaline earth metal of gluconic acid, wherein R is -(NH-CH2-CH2-)nNH-; X is H and/or an alkali metal; and n is an integer of 0-2. Preferably the abrasive is silica; and the alkali metal salt or alkaline earth metal of gluconic acid is sodium or potassium salt of gluconic acid.
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