| 摘要 |
A facing targets sputtering device for semiconductor fabrication includes an air-tight chamber in which an inert gas is admittable and exhaustible; a pair of target plates (120, 110) placed at opposite ends of said air-tight chamber respectively so as to face each other and form a plasma region (130) therebetween; a pair of magnets (102, 104, 106, 108) respectively disposed adjacent to said target plates (120, 110) such that magnet poles of different polarities face each other across said plasma region (130) thereby to establish a magnetic field of said plasma region (130) between said target plates (120, 110); a substrate holder (224) disposed adjacent to said plasma region (130), said substrate holder (224) adapted to hold a substrate (222) on which an alloyed thin film is to be deposited; and a back-bias supply (236) coupled to the substrate holder (224).
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