NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A nitride based semiconductor light emitting device and its manufacturing method are provided to improve a light extraction efficiency by forming an N-convexoconcave type contact surface on an N-clad layer. An N-clad layer(20), an active layer(30) and a P-clad layer(40) are sequentially formed on a substrate(10). A plurality of masking dots are formed on the P-clad layer. A P-contact layer(60) with a convexoconcave type structure is formed on the P-clad layer except the masking dots. An N-convexoconcave type contact surface is formed on the N-clad layer by performing a dry etching process on the resultant structure from an upper portion of the P-contact layer to a predetermined portion of the N-clad layer. An N-electrode(100) is formed on the N-convexoconcave type contact surface. A P-electrode(120) is formed on the P-contact layer. The masking dots are made of SixNy.