发明名称
摘要 <p>A current control circuit which controls currents flowing in memory cells in a non-volatile semiconductor memory device includes a circuit which controls the currents flowing in the memory cells in an erase operation so that amounts of the currents fall within a tolerable range.</p>
申请公布号 JP3993665(B2) 申请公布日期 2007.10.17
申请号 JP19970147641 申请日期 1997.06.05
申请人 发明人
分类号 G11C16/02;G11C16/06;G11C16/16;G11C16/30 主分类号 G11C16/02
代理机构 代理人
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