PRE-SILICIDE SPACER REMOVAL

摘要

A pre-silicide spacer removal is provided to protect a silicide layer by firstly removing the spacer before forming the silicide layer, and to protect a source/drain region and an isolation region by covering a mask when the spacer is removed. A gate conductor(116) is formed on a substrate(102). A spacer(122) is formed at both sides of the gate conductor. A source/drain region(110) is formed by implanting impurities into an exposed region of the substrate which is not protected by the spacer and the gate conductor. A mask(130) is deposited on the gate conductor, the spacer and the source/drain region. A portion of the spacer is exposed by recessing the mask so that the source/drain region may be protected by the mask. The spacer and the mask are removed. A silicide region is formed on the gate conductor and the source/drain region.