| 摘要 |
PROBLEM TO BE SOLVED: To provide an exposure device and a resist pattern miniaturization material capable of forming a micropattern transcending a limit caused by wavelength, and to provide a method for forming a micro resist pattern using them. SOLUTION: The resist pattern miniaturization material is the material applied on the resist pattern formed by exposing and developing a photoresist film and miniaturizing the resist pattern by developing after the heat treatment, a liquid including alcohol of a straight-chain or forked alkyl group having one to twelve (12) carbon number filtered by a filter having a hole diameter of not more than 40 nm, and includes an interfacial active agent and/or water. COPYRIGHT: (C)2008,JPO&INPIT |
