PLASMA ION IMPLANTATION PROCESS CONTROL USING REFLECTOMETRY

摘要

An approach that determines an ion implantation processing characteristic in a plasma ion implantation of a substrate is described. In one embodiment, there is a light source configured to direct radiation onto the substrate. A detector is configured to measure radiation reflected from the substrate. A processor is configured to correlate the measured radiation reflected from the substrate to an ion implantation processing characteristic.