| 摘要 |
This invention has a glass member (4a), a metal member (5a), and a transition metal oxide glass (3) that fuses onto both the glass member (4a) and the metal member (5a). The transition metal oxide glass (3) is an n-type semiconductor. This invention is formed by bonding the glass member (4a) and the metal member (5a) using the transition metal oxide glass (3). The transition metal oxide glass (3) has transition metal ions having different valences, and the number of transition metal ions having higher valences is greater than the number of transition metal ions having lower valences. The transition metal oxide glass (3) contains vanadium, at least one of tellurium and phosphorus, and at least one of silver, iron, tungsten, copper, an alkali metal, and an alkali earth metal. The transition metal oxide glass (3) contains vanadium oxide, tellurium oxide, phosphorus oxide, and iron oxide, and the total mass thereof is no less than 75 mass% in relation to the mass of the transition metal oxide glass. |
