| 摘要 |
An IGBT is disposed in an IGBT portion (21), and an FWD is disposed in an FWD portion (22). A p-type base region (5-1) and an n - -type drift region (1) are alternately exposed in a trench (2) longitudinal direction in a substrate front surface in a mesa portion between neighboring trenches (2) in the IGBT portion (21). A p-type anode region (5-2) and the n - -type drift region (1) are alternately exposed in the trench (2) longitudinal direction in the substrate front surface in a mesa portion in the FWD portion (22), and a repetitive structure is formed with a portion of the n - -type drift region (1) sandwiched between p-type anode regions (5-2) and one p-type anode region (5-2) in contact with the portion as one unit region. The proportion occupied by the p-type anode region (5-2) in one unit region (an anode ratio) (±) is 50% to 100%. Therefore, the diode characteristics of an RC-IGBT wherein an IGBT and FWD are incorporated in the same semiconductor substrate can be improved. |
