| 摘要 |
PROBLEM TO BE SOLVED: To provide a heat treatment method capable of performing both of activation of implanted impurities and restoration of introduced defects while preventing cracks of a substrate, and a heat treatment device.SOLUTION: A semiconductor wafer implanted with impurities is heated to a pre-heating temperature T1, then a surface of the semiconductor wafer is heated to a target temperature T2 by radiating flash light, and its surface temperature is kept substantially at the target temperature for 5 milliseconds or longer by continuing irradiation with the flash light. In this case, its surface temperature rises from the pre-heating temperature T1 to the target temperature T2 for a time that is longer than a heat conduction time required for heat conduction from the surface of the semiconductor wafer to its rear surface. Thereby a difference between the surface temperature and the rear surface temperature of the semiconductor wafer is usually set to be below half the rising temperature, and a concentration of stress caused by a thermal expansion difference between the surface and the rear surface of the semiconductor wafer, can be alleviated. As a result, during irradiation of the flash light, the cracks of the semiconductor wafer can be prevented. |
