Method for providing charge protection to one or more dies during formation of a stacked silicon device

摘要

A method for providing charge protection to a die during formation of an integrated circuit, includes bonding the die to an interposer to form an unprotected stacked silicon component; encapsulating the unprotected stacked silicon component with a mold compound to cover at least a top surface of the die; grinding the mold compound to reduce a thickness of the mold compound; bonding a carrier wafer to the mold compound; removing the carrier wafer from the mold compound; and removing the mold compound from the top surface of the die after the carrier wafer is removed from the mold compound, to expose the top surface of the die.

主权项

1. A method for providing charge protection to a die during formation of an integrated circuit, comprising:
bonding the die to an interposer to form an unprotected stacked silicon component; encapsulating the unprotected stacked silicon component with a mold compound to cover at least a top surface of the die; forming a protective component over the top surface of the die to form a protected stacked silicon component; bonding a carrier wafer to the protected stacked silicon component; removing the carrier wafer from the protected stacked silicon component; and removing the protective component from the top surface of the die after bumps are formed on the backside of the interposer and after the carrier wafer is removed from the protected stacked silicon component, to expose the top surface of the die.