发明名称 |
Method of forming trenches |
摘要 |
The present invention provides a method for forming trenches. First, a mandrel layer is formed on a substrate, wherein the mandrel layer comprises a stop layer and a sacrificial layer. A spacer is formed on at least a sidewall of the mandrel layer, following by forming a material layer on the substrate for covering the spacer and the mandrel layer. After performing a removing process to remove apart of the material layer, apart of the spacer and the sacrificial layer; the spacer is removed to form at least one first trench in the remaining material layer and the mandrel. |
申请公布号 |
US9384978(B1) |
申请公布日期 |
2016.07.05 |
申请号 |
US201514636200 |
申请日期 |
2015.03.03 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Lin Chao-Hung;Hong Shih-Fang;Feng Li-Wei;Tsai Shih-Hung;Fu Ssu-I;Jenq Jyh-Shyang |
分类号 |
H01L21/76;H01L21/033;H01L21/311 |
主分类号 |
H01L21/76 |
代理机构 |
|
代理人 |
Hsu Winston;Margo Scott |
主权项 |
1. A method of forming trenches, comprising:
forming a mandrel layer on a substrate, wherein the mandrel layer comprises a stop layer and a sacrificial layer; forming a spacer on at least a sidewall of the mandrel layer; forming a material layer on the spacer and the mandrel layer; performing a removing process to remove a part of the material layer, a part of the spacer and the sacrificial layer, wherein after the removing process, a top surface of the stop layer is leveled with a top surface of the spacer and a top surface of the material layer; and removing the spacer to form at least one first trench in the remaining material layer and the mandrel layer. |
地址 |
Science-Based Industrial Park, Hsin-Chu TW |