发明名称 Method of forming trenches
摘要 The present invention provides a method for forming trenches. First, a mandrel layer is formed on a substrate, wherein the mandrel layer comprises a stop layer and a sacrificial layer. A spacer is formed on at least a sidewall of the mandrel layer, following by forming a material layer on the substrate for covering the spacer and the mandrel layer. After performing a removing process to remove apart of the material layer, apart of the spacer and the sacrificial layer; the spacer is removed to form at least one first trench in the remaining material layer and the mandrel.
申请公布号 US9384978(B1) 申请公布日期 2016.07.05
申请号 US201514636200 申请日期 2015.03.03
申请人 UNITED MICROELECTRONICS CORP. 发明人 Lin Chao-Hung;Hong Shih-Fang;Feng Li-Wei;Tsai Shih-Hung;Fu Ssu-I;Jenq Jyh-Shyang
分类号 H01L21/76;H01L21/033;H01L21/311 主分类号 H01L21/76
代理机构 代理人 Hsu Winston;Margo Scott
主权项 1. A method of forming trenches, comprising: forming a mandrel layer on a substrate, wherein the mandrel layer comprises a stop layer and a sacrificial layer; forming a spacer on at least a sidewall of the mandrel layer; forming a material layer on the spacer and the mandrel layer; performing a removing process to remove a part of the material layer, a part of the spacer and the sacrificial layer, wherein after the removing process, a top surface of the stop layer is leveled with a top surface of the spacer and a top surface of the material layer; and removing the spacer to form at least one first trench in the remaining material layer and the mandrel layer.
地址 Science-Based Industrial Park, Hsin-Chu TW