Semiconductor device

摘要

A semiconductor device which includes a normal cell, a replica cell, a word line, a first bit line, a bias generation circuit, a second bit line, and a current generation circuit. The normal cell is a one-time programmable (OTP) type memory cell. The replica cell has characteristics equivalent to those of the normal cell. The word line is electrically connected in common to a control terminal of the normal cell and a control terminal of the replica cell. The first bit line is electrically connected to an input-output terminal of the replica cell. The bias generation circuit is electrically connected to the first bit line. The second bit line is electrically connected to an input-output terminal of the normal cell. The current generation circuit is electrically connected to the second bit line. The bias generation circuit and the current generation circuit are controlled through a common control line.

主权项

1. A semiconductor device comprising:
a normal cell that is a one-time programmable (OTP) type memory cell; a replica cell that has characteristics equivalent to those of the normal cell; a word line that is electrically connected in common to a control terminal of the normal cell and a control terminal of the replica cell; a first bit line that is electrically connected to an input-output terminal of the replica cell; a bias generation circuit that is electrically connected to the first bit line; a second bit line that is electrically connected to an input-output terminal of the normal cell; and a current generation circuit that is connected to and the second bit line, wherein the bias generation circuit and the current generation circuit are controlled through a common control line.